10th Symposium on Schottky Barrier MOS (SB-MOS) Devices – Ten Years of Hitting the Barrier
by Mike Schwarz, Joachim Knoch, Jens Trommer and Laurie Calvet

The 10th Symposium on Schottky Barrier MOS (SB-MOS) devices was held on August 31 – September 1, 2026, at RWTH Aachen University, Germany. Fittingly for a symposium series devoted to metal–semiconductor junctions, the event took place in the Walter Schottky Haus on the RWTH Aachen campus. It was organized as an IEEE EDS Region 8 event and co-sponsored by RWTH Aachen University, Technische Hochschule Mittelhessen (THM), Namlab gGmbH – a TU Dresden company, the german research foundation with the TRR Active-3D, the European Union via the projects Sensoteric and Attoswitch and IEEE EDS. Marking the tenth anniversary of the series under the motto “10 years of hitting the barrier”, the symposium was attended by approximately 45 participants and featured 22 talks organized in four thematic sessions, with contributions from Europe, Asia and the United States. Speakers came mainly from academia and public research institutes, complemented by contributions from industry. As in previous years, the workshop format left ample room for in-depth scientific discussions after the talks as well as during the breaks, the lab tours and the conference dinner.

After a warm welcome and introductory remarks by Prof. Joachim Knoch, head of the Institute of Semiconductor Electronics at RWTH Aachen University and host of this year’s edition, the first day opened with a session dedicated to contacts on two-dimensional materials.

Session 1: Metal–2D Materials Devices

Junhong Na (Kangwon National University, KR) – “From Schottky Barriers to Negative Capacitance in 2D MoS₂ Transistors”

Surajit Sutar (IMEC, BE) – “Understanding and Improving Contacts to 2D Materials for MOSFET Applications”

Christoph Stampfer (RWTH Aachen, DE) – “Gate-Tunable Josephson Diodes in Magic-Angle Twisted Bilayer Graphene”

Session 2: Schottky-Barrier FET Devices & Technology

Antonio Di Bartolomeo (University of Salerno, IT) – “Revisiting Schottky Diodes Using Landauer’s Formalism”

Walter Weber (TU Wien, AT) – “SiGe and Ge on SOI Schottky FETs”

After lunch, Prof. Joachim Knoch and his team invited the participants to a tour of the laboratories and cleanroom facilities of the Institute of Semiconductor Electronics, giving a first-hand impression of the technology work behind many of the contributions presented at the symposium.

Session 2 (cont’d)

Kenta Moto (RWTH Aachen, DE) – “Low-Temperature GeSn Device Technologies: From Ferroelectric Memories to Advanced Transistors”

John Snyder (Quantum Opus LLC, US) – “Cryogenic Investigation of SB-MOS Devices”

Patrick Liebisch (RWTH Aachen, DE) – “Mitigating the Degradation of Metal–Semiconductor Contacts with Optimized Electron Beam Evaporation”

Session 3: Reconfigurable and Contact Switching FETs

Jens Trommer (Namlab, DE) – “Analog and Digital Design Opportunities with Reconfigurable Schottky Barrier Field-Effect Transistors”

Katrin Pingen (Namlab, DE) – “Recent Progress Towards BEOL Integration of Silicon-Channel RFETs”

The scientific program of the first day closed at 6 p.m. and was followed by the conference dinner and a social event, where the discussions of the day continued in a relaxed atmosphere.

The second day continued with the reconfigurable device session and was devoted in its second half to neuromorphic and probabilistic computing, illustrating how far the application space of Schottky barrier junctions has broadened over the past ten years.

Session 3 (cont’d): Reconfigurable and Contact Switching FETs

Zhenhao Liu (RWTH Aachen, DE) – “RFETs with Programmable Dielectrics”

Anyana Karmakar (THM Gießen, DE) – “Fully Symmetric Physics-Based Verilog-A Compact Model for Reconfigurable Field-Effect Transistors with Multiple Gate Electrodes”

Eric Fehrmann (Namlab, DE) – “A Reconfigurable Flip-Flop Based on Co-Integrated CMOS”

Radu Sporea (University of Surrey, UK) – “Geometry Optimization for Robust D.C. Performance in Contact-Controlled Thin-Film Transistors”

Spencer Skinner (University of Surrey, UK) – “Geometry-Robust Source-Gated Behaviour in Printed Field-Plate [Transistors – title TBD]”

Eva Bestelink (University of Surrey, UK) – “Tailoring Transconductance in Contact-Controlled Transistors”

Session 4: Neuromorphic & Probabilistic Computing with SBFETs

Qing-Tai Zhao (Forschungszentrum Jülich, DE) – “Ferroelectric SBFETs on SOI for Neuromorphic Computing”

Viktor Wahler (TU Wien, AT) – “Ferroelectrically Enhanced Schottky Barrier FETs for Neuromorphic Applications”

Laurie Calvet (CNRS, FR) – “Physical Probabilistic Computing: Integration Progress and Opportunities for Reconfigurable Schottky-Barrier Transistors”

Anjana Rajan (Forschungszentrum Jülich, DE) – “Cryogenic Memory and Artificial Synaptic Functions in a Si/SiGe QW Schottky-Barrier MOSFET”

Mike Schwarz (Technische Hochschule Mittelhessen, DE) – “Resistive RAM Filament Formation: A Stochastic Approach”

Alexander Klös (Technische Hochschule Mittelhessen, DE) – “Intrinsic Capacitances in Source-Gated Devices”

Prof. Joachim Knoch closed the symposium with final remarks, looking back at ten years of the SB-MOS symposium series. What started as a small meeting of a handful of groups working on Schottky barrier MOSFETs has grown into a regular European forum in which contact-controlled devices, reconfigurable transistors, 2D material contacts, cryogenic electronics and neuromorphic as well as probabilistic computing are discussed side by side. He thanked all speakers, participants, sponsors and organizers for making the tenth edition a success. Dr. Jens Trommer announced that the 11th Symposium on SB-MOS devices will be hosted by NamLab/IFW Dresden in 2027.