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DTSTART;TZID=Europe/Berlin:20260912T080000
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DTSTAMP:20260912T085648Z
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UID:4501-1789200000-1789232400@www.ieee.de
SUMMARY:10th Symposium on Schottky Barrier MOS (SB-MOS) Devices – Ten Years of Hitting the Barrier
DESCRIPTION:10th Symposium on Schottky Barrier MOS (SB-MOS) Devices – Ten Years of Hitting the Barrier\nby Mike Schwarz\, Joachim Knoch\, Jens Trommer and Laurie Calvet \nThe 10th Symposium on Schottky Barrier MOS (SB-MOS) devices was held on August 31 – September 1\, 2026\, at RWTH Aachen University\, Germany. Fittingly for a symposium series devoted to metal–semiconductor junctions\, the event took place in the Walter Schottky Haus on the RWTH Aachen campus. It was organized as an IEEE EDS Region 8 event and co-sponsored by RWTH Aachen University\, Technische Hochschule Mittelhessen (THM)\, Namlab gGmbH – a TU Dresden company\, the german research foundation with the TRR Active-3D\, the European Union via the projects Sensoteric and Attoswitch and IEEE EDS. Marking the tenth anniversary of the series under the motto “10 years of hitting the barrier”\, the symposium was attended by approximately 45 participants and featured 22 talks organized in four thematic sessions\, with contributions from Europe\, Asia and the United States. Speakers came mainly from academia and public research institutes\, complemented by contributions from industry. As in previous years\, the workshop format left ample room for in-depth scientific discussions after the talks as well as during the breaks\, the lab tours and the conference dinner. \n  \nAfter a warm welcome and introductory remarks by Prof. Joachim Knoch\, head of the Institute of Semiconductor Electronics at RWTH Aachen University and host of this year’s edition\, the first day opened with a session dedicated to contacts on two-dimensional materials. \nSession 1: Metal–2D Materials Devices \nJunhong Na (Kangwon National University\, KR) – “From Schottky Barriers to Negative Capacitance in 2D MoS₂ Transistors” \nSurajit Sutar (IMEC\, BE) – “Understanding and Improving Contacts to 2D Materials for MOSFET Applications” \nChristoph Stampfer (RWTH Aachen\, DE) – “Gate-Tunable Josephson Diodes in Magic-Angle Twisted Bilayer Graphene” \nSession 2: Schottky-Barrier FET Devices & Technology \nAntonio Di Bartolomeo (University of Salerno\, IT) – “Revisiting Schottky Diodes Using Landauer’s Formalism” \nWalter Weber (TU Wien\, AT) – “SiGe and Ge on SOI Schottky FETs” \nAfter lunch\, Prof. Joachim Knoch and his team invited the participants to a tour of the laboratories and cleanroom facilities of the Institute of Semiconductor Electronics\, giving a first-hand impression of the technology work behind many of the contributions presented at the symposium. \nSession 2 (cont’d) \nKenta Moto (RWTH Aachen\, DE) – “Low-Temperature GeSn Device Technologies: From Ferroelectric Memories to Advanced Transistors” \nJohn Snyder (Quantum Opus LLC\, US) – “Cryogenic Investigation of SB-MOS Devices” \nPatrick Liebisch (RWTH Aachen\, DE) – “Mitigating the Degradation of Metal–Semiconductor Contacts with Optimized Electron Beam Evaporation” \nSession 3: Reconfigurable and Contact Switching FETs \nJens Trommer (Namlab\, DE) – “Analog and Digital Design Opportunities with Reconfigurable Schottky Barrier Field-Effect Transistors” \nKatrin Pingen (Namlab\, DE) – “Recent Progress Towards BEOL Integration of Silicon-Channel RFETs” \nThe scientific program of the first day closed at 6 p.m. and was followed by the conference dinner and a social event\, where the discussions of the day continued in a relaxed atmosphere. \n\n  \nThe second day continued with the reconfigurable device session and was devoted in its second half to neuromorphic and probabilistic computing\, illustrating how far the application space of Schottky barrier junctions has broadened over the past ten years. \nSession 3 (cont’d): Reconfigurable and Contact Switching FETs \nZhenhao Liu (RWTH Aachen\, DE) – “RFETs with Programmable Dielectrics” \nAnyana Karmakar (THM Gießen\, DE) – “Fully Symmetric Physics-Based Verilog-A Compact Model for Reconfigurable Field-Effect Transistors with Multiple Gate Electrodes” \nEric Fehrmann (Namlab\, DE) – “A Reconfigurable Flip-Flop Based on Co-Integrated CMOS” \nRadu Sporea (University of Surrey\, UK) – “Geometry Optimization for Robust D.C. Performance in Contact-Controlled Thin-Film Transistors” \nSpencer Skinner (University of Surrey\, UK) – “Geometry-Robust Source-Gated Behaviour in Printed Field-Plate [Transistors – title TBD]” \nEva Bestelink (University of Surrey\, UK) – “Tailoring Transconductance in Contact-Controlled Transistors” \nSession 4: Neuromorphic & Probabilistic Computing with SBFETs \nQing-Tai Zhao (Forschungszentrum Jülich\, DE) – “Ferroelectric SBFETs on SOI for Neuromorphic Computing” \nViktor Wahler (TU Wien\, AT) – “Ferroelectrically Enhanced Schottky Barrier FETs for Neuromorphic Applications” \nLaurie Calvet (CNRS\, FR) – “Physical Probabilistic Computing: Integration Progress and Opportunities for Reconfigurable Schottky-Barrier Transistors” \nAnjana Rajan (Forschungszentrum Jülich\, DE) – “Cryogenic Memory and Artificial Synaptic Functions in a Si/SiGe QW Schottky-Barrier MOSFET” \nMike Schwarz (Technische Hochschule Mittelhessen\, DE) – “Resistive RAM Filament Formation: A Stochastic Approach” \nAlexander Klös (Technische Hochschule Mittelhessen\, DE) – “Intrinsic Capacitances in Source-Gated Devices” \n\n  \nProf. Joachim Knoch closed the symposium with final remarks\, looking back at ten years of the SB-MOS symposium series. What started as a small meeting of a handful of groups working on Schottky barrier MOSFETs has grown into a regular European forum in which contact-controlled devices\, reconfigurable transistors\, 2D material contacts\, cryogenic electronics and neuromorphic as well as probabilistic computing are discussed side by side. He thanked all speakers\, participants\, sponsors and organizers for making the tenth edition a success. Dr. Jens Trommer announced that the 11th Symposium on SB-MOS devices will be hosted by NamLab/IFW Dresden in 2027.
URL:https://www.ieee.de/event/10th-symposium-on-schottky-barrier-mos-sb-mos-devices-ten-years-of-hitting-the-barrier/
ATTACH;FMTTYPE=image/jpeg:https://www.ieee.de/wp-content/uploads/2026/09/20260911Mike.jpg
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